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| RB053L-30 Diodes Schottky barrier diode RB053L-30 Applications High frequency rectification For switching power supply External dimensions (Units : mm) 1.50.2 CATHODE MARK Features 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR. 3) VRM=30V guaranteed. 4.50.2 1.20.3 5 6 0.1 +0.02 -0.1 2.00.2 2.60.2 Construction Silicon epitaxial planar ROHM : PMDS EIAJ : - JEDEC : SOD-106 , *****Date of manufacture EX. 1999.129, C Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current (60Hz * 1 ) Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 30 30 3.0 70 125 -40~+125 Unit V V A A C C TC Max. = 90C when mounted on alumina PCBs. Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Symbol VF IR1 IR2 Min. - - - Typ. - - - Max. 0.42 90 200 Unit V A A IF=3.0A VR=15V VR=30V Conditions 5.00.3 RB053L-30 Diodes Electrical characteristic curves (Ta = 25C) 10 100m Ta=125C FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) TERMINAL CAPACITANCE : CT (pF) 1000 1 2 =1 Ta 10m Ta=75C 1m 5 C 100m Ta =7 5 Ta= C 25 C 100 Ta=25C 10m 10 1m 0 0.1 0.2 0.3 0.4 0.5 1 0 10 20 30 40 100 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics AVERAGE RECTIFIED FORWARD CURRENT : IO (A) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) DC D=0.8 IF IO Tp T D=Tp / T VR=VRM / 2 DC D=0.8 Tp FORWARD POWER DISSIPATION : PF (W) 5.0 5.0 IF IO T 1.4 D=0.8 DC 1.2 D=0.5 4.0 D=0.5 4.0 D=0.5 D=Tp / T VR=VRM / 2 1.0 0.8 0.6 D=0.1 D=0.05 sine D=0.3 D=0.2 3.0 sine D=0.3 D=0.2 3.0 sine wave D=0.3 D=0.2 2.0 D=0.1 2.0 D=0.1 IF 0.4 Tp IO T D=Tp / T Tj=Tj Max. 1.0 D=0.05 1.0 D=0.05 0.2 0 0 0 0 25 50 75 100 125 0 0 25 50 75 100 125 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 AMBIENT TEMPERATURE : Ta (C) LEAD TEMPERATURE : TL (C) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig.4 Derating curve (IO - Ta) (When mounted on alumina PCBs) Fig.5 Derating curve (IO - TL) (When mounted on alumina PCBs) Fig.6 Forward power dissipation characteristics AVERAGE RECTIFIED FORWARD CURRENT : IO (A) REVERSE POWER DISSIPATION : PR (W) 0.30 VR 5.0 DC IF 0.25 Tj=Tj Max. 0 0.20 0.15 0.10 Tp T Tj=Tj Max. D=Tp / T VR D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 DC D=0.8 IO Tp T D=Tp / T VR=VRM / 2 4.0 D=0.5 3.0 sine D=0.3 D=0.2 2.0 D=0.1 sine 0.05 D=0.8 1.0 D=0.05 0 0 2 4 6 8 10 12 14 16 18 20 0 0 25 50 75 100 125 REVERSE VOLTAGE : VR (V) AMBIENT TEMPERATURE : Ta (C) Fig.7 Reverse power dissipation characteristics Fig.8 Derating curve (IO - Ta) (when mounted on glass epoxy PCBs) |
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